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idtf 2258 n lgk datasheet voltage variable rf attenuator 50 to 6000 mhz f2258, rev 1 01/20/2017 1 ? 2015 integrated device technology, inc. g eneral d escription the f2258 is a low insertion loss v oltage v ariable rf a ttenuator (vva) designed for a multitude of wireless and other rf applications. this device covers a broad frequency range from 50 mhz to 6000 mhz. in addition to providing low insertion loss, the f2258 provides excellent linearity performance over its e ntire voltage control and attenuation range. the f2258 uses a single positive supply voltage of 3.15 v to 5.25 v. another feature includes multi - directional operation meaning the rf input can be applied to either rf1 or rf2 pins. control voltage ranges f rom 0 v to 3.6 v. c ompetitive a dvantage f2258 provides extremely low insertion loss and superb ip3, ip2, return loss and slope linearity across the control range. comparing to the previous state - of - the - art for silicon vvas this device is better as follows: ? insertion loss : @ 2000 mhz: 1.4 db vs. 2.8 db @ 6000 mhz: 2.7 db vs. 7 .0 db ? maximum attenuation slope: 33 db/volt vs. 53 db/volt ? minimum return loss up to 6000 mhz: 12.5 db vs. 7 db ? minimum output ip3: 31 dbm vs. 15 dbm ? minimum input ip2: 87 dbm vs. 80 dbm ? maximum operating temperature: +105 c v s. +85 c a pplications ? base station 2g, 3g, 4g, ? portable wireless ? repeaters and e911 systems ? digital pre - distortion ? point to point infrastructure ? public safety infrastructure ? satellite receivers and modems ? wimax receivers and transmitters ? military systems, jtrs radios ? rfid handheld and portable readers ? cable infrastructure ? wireless lan ? test / ate equipment f eatures ? low insertion loss: 1.4 db @ 2000 mhz ? typical / min iip3: 65 dbm / 47 dbm ? typical / min iip2: 95 dbm / 87 dbm ? 33.6 db attenuation ra nge ? bi - directional rf ports ? +34.4 dbm input p1db compression ? linear - in - db attenuation characteristic ? supply voltage: 3.15 v to 5.25 v ? v ctrl range: 0 v to 3.6 v using 5 v supply ? +105 c max operating temperature ? 3 mm x 3 mm , 16 - pin qfn package f unctional b lock d iagram o rdering i nformation idt f2258nlgk8 0.9 mm height package green tape & reel omit idt prefix rf p roduct line c o n t r o l r f 1 r f 2 v c t r l v d d
f2258 voltage variable rf attenuator 2 rev 1 01 / 20 /201 7 a bsolute m aximum r atings parameter symbol min max units v dd to gnd v dd - 0.3 +5.5 v v ctrl to gnd (with 0 v v dd 5.25 v) v ctrl - 0.3 minimum ( v dd, + 4.0) v rf1, rf2 to gnd v rf - 0.3 0.3 v rf1 or rf2 input power applied for 24 hours maximum ( v dd applied @ 2 000 m hz and t c ase =+85 c) p max24 30 dbm junction temperature t j 150 c storage temperature range t st - 65 150 c lead temperature (soldering, 10s) 260 c electrostatic discharge C hbm (jedec/esda js - 001 - 2012) v esdhbm (class 1c) electrostatic discharge C cdm (jedec 22 - c101f) v esdcdm (class c3) stresses above those listed above may cause permanent damage to the device. functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. exposure to absolute maximum rating conditions for ex tended periods may affect device reliability. p ackage t hermal and m oisture c haracteristics ja (junction C ambient) 80.6 c/w jc (junction C case) [the case is defined as the exposed paddle] 5.1 c/w moisture sensitivity rating (per j - std - 020) msl1
f2258 rev 1 01 / 20/2017 3 voltage variable rf attenuator f2258 r ecommended o perating c onditions parameter symbol conditions min typ max units supply voltage v dd 3.15 5.25 v control voltage v ctrl v dd = 3.9 0 v to 5.25 v 0 3.6 v v dd = 3.15 v to 3.9 0 v 0 v dd - 0.3 operating temperature range t case exposed paddle - 40 +105 c freq uency range f rf 50 6000 mhz rf operating power p max , cw power can be applied to rf1 or rf2 see figure 1 dbm rf1 port impedance z rf1 single ended 50 rf2 port impedance z rf2 single ended 50 figure 1 - maximum rf input power vs. rf frequency
f2258 voltage variable rf attenuator 4 rev 1 01 / 20 /201 7 f2258 s pecification refer to evkit / applications circuit, v dd = +3.3 v, t case = +25 c, signal applied to rf1 input, f rf = 2000 mhz, minimum attenuation, p in = 0 dbm for small signal par ameters, +20 dbm for single tone linearity tests, +20 dbm per tone for two tone tests, two tone delta frequency = 50 mhz, pcb board traces and connector losses are de - embedded unless otherwise noted. refer to typical operating curves for performance over entire frequency band. parameter symbol conditions min typ max units supply current i dd 0. 5 1 1.17 2 ma i ctrl current i ctrl - 1.0 1 4 a insertion loss, il a min minimum attenuation 1.4 1.9 db maximum attenuation a max 34 2 35 db insertion phase max at 36 db attenuation relative to insertion loss 27 deg mid at 18 db attenuation relative to insertion loss 10 input 1db compression 3 p1db 34.4 dbm minimum rf1 return loss over control voltage range s 11 50 mhz 4 16 db 700 mhz 17 2000 mhz 17 6000 mhz 15 minimum rf 2 return loss over control voltage range s 22 50 mhz 4 16 db 700 mhz 15 2000 mhz 16 6000 mhz 13 input ip3 iip3 65 dbm iip3 min all attenuation settings 44 47 o utput ip3 oip3 min maximum attenuation 35 dbm input ip2 iip2 p in + im2 dbc , im2 term is f1+f2 95 dbm iip2 min all attenuation settings 87 input ih2 hd2 p in + h2 dbc 90 dbm input ih3 hd3 p in + (h3 dbc /2) 54 dbm settling time t settl0.1db any 1 db step in the 0 db to 33 db control range 50% v ctrl to rf settled to within 0.1 db 15 s note 1: items in min/max columns in bold italics are guaranteed by test. note 2: items in min/max columns that are not bold/italics are guaranteed by design characterization. note 3: the input 1db compression point is a linearity figure of merit. refer to absolute maximum ratings section along with figure 1 for the maximum rf input power vs. rf frequency . note 4: set blocking capacitors c1 & c2 to 0.01uf to achieve best return loss perform ance at 50 mhz.
f2258 rev 1 01 / 20/2017 5 voltage variable rf attenuator t ypical o perating c onditions (toc) unless otherwise noted for the toc graphs on the following pages, the following conditions apply. ? v dd = +3.3 v or +5.0 v ? t case = +25 oc ? f rf = 2000 mhz ? rf trace and connector losses are de - embedded for s - parameters ? pin = 0 dbm for all small signal tests ? pin = +20 dbm for single tone linearity tests (rf1 port driven) ? pin = +20 dbm/tone for two tone linearity tests (rf1 port driven) ? two tone frequency spacing = 50 mhz
f2258 voltage variable rf attenuator 6 rev 1 01 / 20 /201 7 t ypical o perating c onditions [ s2p b roadband p erformance ] ( - 1 - ) attenuation vs. v ctrl min. & max. attenuation vs. frequency attenuation vs. frequency attenuation delta to 25c vs. frequency - 40 - 35 - 30 - 25 - 20 - 15 - 10 - 5 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 attenuation (db) v ctrl (v) 0.4ghz 0.7ghz 1.5ghz 2.7ghz 4.0ghz 5.0ghz 6.0ghz - 50 - 40 - 30 - 20 - 10 0 0 1 2 3 4 5 6 7 8 9 attenuation (db) frequency (ghz) vctrl = 0.0v vctrl = 0.8v vctrl = 1.0v vctrl = 1.2v vctrl = 1.4v vctrl = 1.6v vctrl = 1.8v vctrl = 2.4v - 3.00 - 2.50 - 2.00 - 1.50 - 1.00 - 0.50 0.00 0.50 1.00 1.50 2.00 2.50 3.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 attenuation delta to 25c (db) v ctrl (v) - 40c / 0.9ghz - 40c / 2.0ghz - 40c / 3.0ghz 105c / 0.9ghz 105c / 2.0ghz 105c / 3.0ghz
f2258 rev 1 01 / 20/2017 7 voltage variable rf attenuator t ypical o perating c onditions [s2p vs . v ctrl ] ( - 2 - ) attenuation vs. v ctrl rf1 return loss vs. v ctrl insertion phase ? vs. v ctrl attenuation slope vs. v ctrl rf2 return loss vs. v ctrl insertion phase slope vs. v ctrl (positive phase = electrically shorter) - 40 - 35 - 30 - 25 - 20 - 15 - 10 - 5 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 attenuation (db) v ctrl (v) 0.4ghz 0.7ghz 1.5ghz 2.7ghz 4.0ghz 5.0ghz 6.0ghz - 40 - 35 - 30 - 25 - 20 - 15 - 10 - 5 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 rf1 return loss (db) v ctrl (v) 0.4ghz 0.7ghz 1.5ghz 2.7ghz 4.0ghz 5.0ghz 6.0ghz - 10 0 10 20 30 40 50 60 70 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 insertion phase ? (deg) v ctrl (v) 0.4ghz 0.7ghz 1.5ghz 2.7ghz 4.0ghz 5.0ghz 6.0ghz 0 5 10 15 20 25 30 35 40 45 50 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 attenuation slope (db/v) v ctrl (v) 0.4ghz 0.7ghz 1.5ghz 2.7ghz 4.0ghz 5.0ghz 6.0ghz - 40 - 35 - 30 - 25 - 20 - 15 - 10 - 5 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 rf2 return loss (db) v ctrl (v) 0.4ghz 0.7ghz 1.5ghz 2.7ghz 4.0ghz 5.0ghz 6.0ghz - 20 0 20 40 60 80 100 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 insertion phase slope (deg/v) v ctrl (v) 0.4ghz 0.7ghz 1.5ghz 2.7ghz 4.0ghz 5.0ghz 6.0ghz
f2258 voltage variable rf attenuator 8 rev 1 01 / 20 /201 7 t ypical o perating c onditions [s2p vs . v ctrl & t emperature ] ( - 3 - ) attenuation response vs. v ctrl rf1 return loss vs. v ctrl insertion phase ? vs. v ctrl attenuation slope vs. v ctrl rf2 return loss vs. v ctrl insertion phase slope vs. v ctrl (positive phase = electrically shorter) - 40 - 35 - 30 - 25 - 20 - 15 - 10 - 5 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 attenuation (db) v ctrl (v) - 40c / 0.9ghz 25c / 0.9ghz 105c / 0.9ghz - 40c / 2.0ghz 25c / 2.0ghz 105c / 2.0ghz - 40c / 3.0ghz 25c / 3.0ghz 105c / 3.0ghz - 40 - 35 - 30 - 25 - 20 - 15 - 10 - 5 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 rf1 return loss (db) v ctrl (v) - 40c / 0.9ghz - 40c / 2.0ghz - 40c / 3.0ghz 25c / 0.9ghz 25c / 2.0ghz 25c / 3.0ghz 105c / 0.9ghz 105c / 2.0ghz 105c / 3.0ghz 0 5 10 15 20 25 30 35 40 45 50 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 attenuation slope (db/v) v ctrl (v) - 40c / 0.9ghz 25c / 0.9ghz 105c / 0.9ghz - 40c / 2.0ghz 25c / 2.0ghz 105c / 2.0ghz - 40c / 3.0ghz 25c / 3.0ghz 105c / 3.0ghz - 40 - 35 - 30 - 25 - 20 - 15 - 10 - 5 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 rf2 return loss (db) v ctrl (v) - 40c / 0.9ghz - 40c / 2.0ghz - 40c / 3.0ghz 25c / 0.9ghz 25c / 2.0ghz 25c / 3.0ghz 105c / 0.9ghz 105c / 2.0ghz 105c / 3.0ghz
f2258 rev 1 01 / 20/2017 9 voltage variable rf attenuator t ypical o perating c onditions [s2p vs . a ttenuation & t emperature ] ( - 4 - ) rf1 return loss vs. attenuation rf2 return loss vs. attenuation insertion phase vs. attenuation rf1 return loss vs. attenuation rf2 return loss vs. attenuation insertion phase vs. attenuation (positive phase = electrically shorter) (positive phase = electrically shorter) - 40 - 35 - 30 - 25 - 20 - 15 - 10 - 5 0 0 4 8 12 16 20 24 28 32 36 rf1 return loss (db) attenuation (db) 0.4ghz 0.7ghz 1.5ghz 2.7ghz 4.0ghz 5.0ghz 6.0ghz - 40 - 35 - 30 - 25 - 20 - 15 - 10 - 5 0 0 4 8 12 16 20 24 28 32 36 rf2 return loss (db) attenuation (db) 0.4ghz 0.7ghz 1.5ghz 2.7ghz 4.0ghz 5.0ghz 6.0ghz - 10 0 10 20 30 40 50 60 70 0 4 8 12 16 20 24 28 32 36 insertion phase ? (deg) attenuation (db) 0.4ghz 0.7ghz 1.5ghz 2.7ghz 4.0ghz 5.0ghz 6.0ghz - 40 - 35 - 30 - 25 - 20 - 15 - 10 - 5 0 0 4 8 12 16 20 24 28 32 36 rf1 return loss (db) attenuation (db) - 40c / 0.9ghz - 40c / 2.0ghz - 40c / 3.0ghz 25c / 0.9ghz 25c / 2.0ghz 25c / 3.0ghz 105c / 0.9ghz 105c / 2.0ghz 105c / 3.0ghz - 40 - 35 - 30 - 25 - 20 - 15 - 10 - 5 0 0 4 8 12 16 20 24 28 32 36 rf2 return loss (db) attenuation (db) - 40c / 0.9ghz - 40c / 2.0ghz - 40c / 3.0ghz 25c / 0.9ghz 25c / 2.0ghz 25c / 3.0ghz 105c / 0.9ghz 105c / 2.0ghz 105c / 3.0ghz 0 5 10 15 20 25 30 35 40 45 50 0 4 8 12 16 20 24 28 32 36 insertion phase ? (deg) attenuation (db) - 40c / 0.9ghz - 40c / 2.0ghz - 40c / 3.0ghz 25c / 0.9ghz 25c / 2.0ghz 25c / 3.0ghz 105c / 0.9ghz 105c / 2.0ghz 105c / 3.0ghz
f2258 voltage variable rf attenuator 10 rev 1 01 / 20 /201 7 t ypical o perating c onditions [s2p vs . f requency ] ( - 5 - ) min & max. attenuation vs. frequency worst - case rf1 return loss vs. frequency max. insertion phase ? vs. frequency min. & max. attenuation slope vs. frequency worst - case rf2 return loss vs. frequency gain compression vs. frequency (positive phase = electrically shorter) vctrl varied from 0.8v to 1.8v - 25 - 20 - 15 - 10 - 5 0 0 1 2 3 4 5 6 worst - case rf1 return loss (db) frequency (ghz) - 40c 25c 105c - 10 0 10 20 30 40 50 60 70 0 1 2 3 4 5 6 max. insertion phase ? (deg) frequency (ghz) - 40c 25c 105c 10 15 20 25 30 35 40 45 50 0 1 2 3 4 5 6 min./max. atenuation slope (db/v) frequency (ghz) max. slope min. slope - 25 - 20 - 15 - 10 - 5 0 0 1 2 3 4 5 6 worst - case rf2 return loss (db) frequency (ghz) - 40c 25c 105c
f2258 rev 1 01 / 20/2017 11 voltage variable rf attenuator t ypical o perating c onditions [s2p @ l ow f requency , g roup d elay ] ( - 6 - ) min & max. attenuation vs. low frequency low - frequency rf1 return loss vs. v ctrl worst - case return loss vs. low frequency low - frequency attenuation vs. v ctrl low - frequency rf2 return loss vs. v ctrl group delay vs. v ctrl ( c1, c2 set to 0.1uf ) ( c1, c2 set to 0.1uf ) ( c1, c2 set to 0.1uf ) ( c1, c2 set to 0.1uf ) ( c1, c2 set to 0.1uf ) - 40 - 35 - 30 - 25 - 20 - 15 - 10 - 5 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 rf1 return loss (db) v ctrl (v) - 40c / 43mhz 25c / 43mhz 105c / 43mhz - 40c / 128mhz 25c / 128mhz 105c / 128mhz - 40c / 255mhz 25c / 255mhz 105c / 255mhz - 20 - 15 - 10 - 5 0 0 100 200 300 400 500 worst - case return loss (db) frequency (mhz) - 40c /rf1 25c / rf1 105c / rf1 - 40c / rf2 25c / rf2 105c / rf2 - 40 - 35 - 30 - 25 - 20 - 15 - 10 - 5 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 attenuation (db) v ctrl (v ) - 40c / 43mhz 25c / 43mhz 105c / 43mhz - 40c / 128mhz 25c / 128mhz 105c / 128mhz - 40c / 255mhz 25c / 255mhz 105c / 255mhz - 40 - 35 - 30 - 25 - 20 - 15 - 10 - 5 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 rf2 return loss (db) v ctrl (v) - 40c / 43mhz 25c / 43mhz 105c / 43mhz - 40c / 128mhz 25c / 128mhz 105c / 128mhz - 40c / 255mhz 25c / 255mhz 105c / 255mhz 0 10 20 30 40 50 60 70 80 90 100 0 1 2 3 4 5 6 group delay (ps) frequency (ghz) - 40c / insertion loss 25c / insertion loss 105c / insertion loss - 40c / max. attenuation 25c / max. attenuation 105c / max. attenuation
f2258 voltage variable rf attenuator 12 rev 1 01 / 20 /201 7 t ypical o perating c onditions 2gh z , v dd =3.3v [ip3, ip2, ih2, ih3 vs . v ctrl ] ( - 7 - ) input ip3 vs. v ctrl input ip2 vs. v ctrl 2nd harm input intercept point vs. v ctrl output ip3 vs. v ctrl output ip2 vs. v ctrl 3rd harm input intercept point vs. v ctrl 30 35 40 45 50 55 60 65 70 75 80 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 input ip3 (dbm) v ctrl (v) - 40c 25c 105c 50 60 70 80 90 100 110 120 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 input ip2 (dbm) v ctrl (v) - 40c 25c 105c 60 70 80 90 100 110 120 130 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 ih2 (dbm) v ctrl (v) - 40c 25c 105c 10 15 20 25 30 35 40 45 50 55 60 65 70 75 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 output ip3 (dbm) v ctrl (v) - 40c 25c 105c 50 60 70 80 90 100 110 120 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 output ip2 (dbm) v ctrl (v) - 40c 25c 105c 10 20 30 40 50 60 70 80 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 ih3 (dbm) v ctrl (v) - 40c 25c 105c
f2258 rev 1 01 / 20/2017 13 voltage variable rf attenuator t ypical o perating c onditions 2gh z , v dd =3.3v [ ip3, ip2, ih2, ih3 vs . v ctrl, rf1/rf2 d riven ] ( - 8 - ) input ip3 vs. v ctrl input ip2 vs. v ctrl 2 nd harm input intercept point vs. v ctrl output ip3 vs. v ctrl output ip2 vs. v ctrl 3 rd harm input intercept point vs. v ctrl 30 35 40 45 50 55 60 65 70 75 80 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 input ip3 (dbm) v ctrl (v) - 40c / rf1 driven 25c / rf1 driven 105c / rf1 driven - 40c / rf2 driven 25c / rf2 driven 105c / rf2 driven 50 60 70 80 90 100 110 120 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 input ip2 (dbm) v ctrl (v) - 40c / rf1 driven 25c / rf1 driven 105c / rf1 driven - 40c / rf2 driven 25c / rf2 driven 105c / rf2 driven 60 70 80 90 100 110 120 130 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 ih2 (dbm) v ctrl (v) - 40c / rf1 driven 25c / rf1 driven 105c / rf1 driven - 40c / rf2 driven 25c / rf2 driven 105c / rf2 driven 10 15 20 25 30 35 40 45 50 55 60 65 70 75 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 output ip3 (dbm) v ctrl (v) - 40c / rf1 driven 25c / rf1 driven 105c / rf1 driven - 40c / rf2 driven 25c / rf2 driven 105c / rf2 driven 50 60 70 80 90 100 110 120 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 output ip2 (dbm) v ctrl (v) - 40c / rf1 driven 25c / rf1 driven 105c / rf1 driven - 40c / rf2 driven 25c / rf2 driven 105c / rf2 driven 10 20 30 40 50 60 70 80 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 ih3 (dbm) v ctrl (v) - 40c / rf1 driven 25c / rf1 driven 105c / rf1 driven - 40c / rf2 driven 25c / rf2 driven 105c / rf2 driven
f2258 voltage variable rf attenuator 14 rev 1 01 / 20 /201 7 t ypical o perating c onditions 2gh z , v dd =3.3v [ip3, ip2, ih2, ih3 vs . a ttenuation ] ( - 9 - ) input ip3 vs. attenuation input ip2 vs. attenuation 2 nd harm input intercep t point vs. attenuation output ip3 vs. attenuation output ip2 vs. attenuation 3 rd harm input intercept point vs. attenuation 30 35 40 45 50 55 60 65 70 75 80 0 4 8 12 16 20 24 28 32 36 input ip3 (dbm) attenuation (db) - 40c 25c 105c 50 60 70 80 90 100 110 120 0 4 8 12 16 20 24 28 32 36 input ip2 (dbm) attenuation (db) - 40c 25c 105c 60 70 80 90 100 110 120 130 0 4 8 12 16 20 24 28 32 36 ih2 (dbm) attenuation (db) - 40c 25c 105c 10 15 20 25 30 35 40 45 50 55 60 65 70 75 0 4 8 12 16 20 24 28 32 36 output ip3 (dbm) attenuation (db) - 40c 25c 105c 50 60 70 80 90 100 110 120 0 4 8 12 16 20 24 28 32 36 output ip2 (dbm) attenuation (db) - 40c 25c 105c 10 20 30 40 50 60 70 80 0 4 8 12 16 20 24 28 32 36 ih3 (dbm) attenuation (db) - 40c 25c 105c
f2258 rev 1 01 / 20/2017 15 voltage variable rf attenuator t ypical o perating c onditions 2gh z , v dd =3.3v [ip3, ip2, ih2, ih3 vs . v ctrl, rf1/rf2 d riven ] ( - 10 - ) input ip3 vs. attenuation input ip2 vs. attenuation 2 nd harm input intercept point vs. attenuation output ip3 vs. attenuation output ip2 vs. attenuation 3 rd harm input intercept point vs. attenuation 30 35 40 45 50 55 60 65 70 75 80 0 4 8 12 16 20 24 28 32 36 input ip3 (dbm) attenuation (db) - 40c / rf1 driven 25c / rf1 driven 105c / rf1 driven - 40c / rf2 driven 25c / rf2 driven 105c / rf2 driven 50 60 70 80 90 100 110 120 0 4 8 12 16 20 24 28 32 36 input ip2 (dbm) attenuation (db) - 40c / rf1 driven 25c / rf1 driven 105c / rf1 driven - 40c / rf2 driven 25c / rf2 driven 105c / rf2 driven 60 70 80 90 100 110 120 130 0 4 8 12 16 20 24 28 32 36 ih2 (dbm) attenuation (db) - 40c / rf1 driven 25c / rf1 driven 105c / rf1 driven - 40c / rf2 driven 25c / rf2 driven 105c / rf2 driven 10 15 20 25 30 35 40 45 50 55 60 65 70 75 0 4 8 12 16 20 24 28 32 36 output ip3 (dbm) attenuation (db) - 40c / rf1 driven 25c / rf1 driven 105c / rf1 driven - 40c / rf2 driven 25c / rf2 driven 105c / rf2 driven 50 60 70 80 90 100 110 120 0 4 8 12 16 20 24 28 32 36 output ip2 (dbm) attenuation (db) - 40c / rf1 driven 25c / rf2 driven 105c / rf1 driven - 40c / rf2 driven 25c / rf2 driven 105c / rf2 driven 10 20 30 40 50 60 70 80 0 4 8 12 16 20 24 28 32 36 ih3 (dbm) attenuation (db) - 40c / rf1 driven 25c / rf1 driven 105c / rf1 driven - 40c / rf2 driven 25c / rf2 driven 105c / rf2 driven
f2258 voltage variable rf attenuator 16 rev 1 01 / 20 /201 7 p ackage d rawing ( 3 mm x 3 mm 16 - pin qfn), n l g 16
f2258 rev 1 01 / 20/2017 17 voltage variable rf attenuator l and p attern d imension
f2258 voltage variable rf attenuator 18 rev 1 01 / 20 /201 7 p in d iagram p in d escription pin name function 4, 9 gnd ground these pins as close to the device as possible. 3 rf2 rf port 2. matched to 50 ohms. must use an external ac coupling capacitor as close to the device as possible. for low frequency operation increase the capacitor value to result in a low reactance at the frequency of interest. 5 v dd power supply input. bypass to gnd with capacito rs close as possible to pin. 1, 2, 6, 8, 11, 12, 13, 14, 15, 16 nc no internal connection. these pins can be left unconnected or connected to ground. 7 v ctrl attenuator control voltage. apply a voltage in the range as specified in the operating conditions table. see application section for details about v ctrl . 10 rf1 rf port 1. matched to 50 ohms. must use an external ac coupling capacitor as close to the device as possible. for low frequency operation increase the capacitor value to result in a low reactance at the frequency of interest. ep exposed pad. internally connected to gnd. solder this exposed pad to a pcb pad that uses multiple ground vias to achieve the specified rf performance.
f2258 rev 1 01 / 20/2017 19 voltage variable rf attenuator a pplications i nformation default start - up the v ctrl pin has an internal pull - down resistor. if left floating, the part will power up in the minimum attenuation state. vctrl the v ctrl pin is used to control the attenuation of the f2258. with v dd = 5 v the control range of v ctrl is from 0 v (minimum att enuation) to 3.6 v (maximum attenuation). for other settings of v dd refer to the operating conditions table. apply v dd before applying voltage to the v ctrl pin to prevent damage to the on - chip pull - up esd diode. if this sequencing is not possible, then set resistor r2 to 1k? to limit the current into the v ctrl pin. rf1 and rf2 ports the f2258 is a bi - directional device thus allowing rf1 or rf2 to be used as the rf input. as displayed in the typical operating conditions curves, rf1 shows enhanced lineari ty. v dd must be applied prior to the application of rf power to ensure reliability. dc blocking capacitors are required on the rf pins and should be set to a value that results in a low reactance over the frequency range of interest. power supplies the s upply pin should be bypassed with external capacitors to minimize noise and fast transients. supply noise can degrade noise figure and fast transients can trigger esd clamps and cause them to fail. supply voltage change or transients should have a slew r ate smaller than 1v/20us. in addition, all control pins should remain at 0v (+/ - 0.3v) while the supply voltage ramps or while it returns to zero. control pin interface if control signal integrity is a concern and clean signals cannot be guaranteed due to overshoot, undershoot, ringing, etc., the following circuit at the input of control pin 7 is recommended as shown below. 1 4 3 2 1 2 9 1 0 1 1 c o n t r o l 5 6 7 8 1 3 1 4 1 5 1 6 2 p f 5 k o h m v c t r l r f 2 r f 1 v d d
f2258 voltage variable rf attenuator 20 rev 1 01 / 20 /201 7 e v k it p icture top view bottom view
f2258 rev 1 01 / 20/2017 21 voltage variable rf attenuator ev kit / a pplications c ircuit
f2258 voltage variable rf attenuator 22 rev 1 01 / 20 /201 7 evk it bom (r ev 02) item # part reference qty description mfr. part # mfr. 1 c3, c6 2 10nf 5%, 50v, x7r ceramic capacitor (0603) grm188r71h103j murata 2 c4, c5 2 1000pf 5%, 50v, c0g ceramic capacitor (0402) grm1555c1h102j murata 3 c1, c2 2 100pf 5%, 50v, c0g ceramic capacitor (0402) GRM1555C1H101J murata 4 r1, r2 2 0 resistors (0402) erj - 2ge0r00x panasonic 5 j1, j2, j3, j4 4 edge launch sma (0.375 inch pitch ground tabs) 142 - 0701 - 851 emerson johnson 6 u1 1 voltage variable attenuator f2258nlgk idt 7 1 printed circuit board f2258 evkit rev 02 idt t op m arkings 04 y 446 l f 2258 part number date code [ yww ] ( week 46 of 2014 ) lot code assembler code
f2258 rev 1 01 / 20/2017 23 voltage variable rf attenuator r evision h istory s heet rev date page description of change o 2015 - aug - 0 3 initial release 1 201 7 - jan - 20 4 increased the max limits for i dd and i ctrl
f2258 voltage variable rf attenuator 24 rev 1 01 / 20 /201 7 corporate headquarters 6024 silver creek valley road san jose, ca 95138 usa sales 1 - 800 - 345 - 7015 or 408 - 284 - 8200 fax: 408 - 284 - 2775 www.idt.com tech support http://www.idt.com/support/technical - support disclaimer integrated device technology, inc. (idt) reserves the right to modify the products and/or specifications described herein at any time, without notice, at idts sole d iscretion. performance specifications and operating parameters of the described products are determined in an independent state and are not guaranteed to perform the same way when installed in customer products. the information contained herein is provided without representation or warranty of any kind, whether express or implied, includin g, but not limited to, the suitability of idt s products for any particular purpose, an implied warranty of merchantability, or non - infringement of the intellectual property rights of others. this document is presented only as a guide and does not convey a ny license under intellectual property right s of idt or any third parties. idts products are not intended for use in applications involving extreme environmental conditions or in life support systems or similar devices where the failure or malfunction of an idt product can be reasonably expected t o significantly affect the health or safety of users. anyone using an idt product in such a manner does so at their own risk , absent an express, written agreement by idt. integrated device technology, idt and the idt logo are trademarks or registered tra demarks of idt and its subsidiaries in the united states and other countries. other trademarks used herein are the property of idt or their respective third party owners. copyright ?2015. integrated device technology, inc. all rights reserved.

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